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Home / Catalog / TME catalog / Semiconductors / Integrated circuits / Memories - integrated circuits / SRAM memories - integrated circuits / Parallel SRAM memories - integ. circ. / AS6C8016-55ZIN

AS6C8016-55ZIN - Parallel SRAM memories - integ. circ.

AS6C8016-55ZIN
Description

IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷5V; 55ns; TSOP44 II

Specifications
Manufacturer ALLIANCE MEMORY
Type of integrated circuit SRAM memory
Kind of memory asynchronous
SRAM
Memory 8Mb SRAM
Memory organisation 512kx16bit
Operating voltage 2.7...5V
Access time 55ns
Case TSOP44 II
Kind of interface parallel
Mounting SMD
Integrated circuit features LPC
IC width 400mils
Operating temperature -40...85°C
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Development and design: Seventh Cat