DMT6016LSS-13 - SMD N channel transistors

DMT6016LSS-13
Description

Транзистор: N-MOSFET; польовий; 60В; 9,5А; Idm: 60А; 2,1Вт; SO8

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 9.5A
Pulsed drain current 60A
Power dissipation 2.1W
Case SO8
Gate-source voltage ±20V
On-state resistance 28mΩ
Mounting SMD
Gate charge 17nC
Kind of package 13 inch reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat