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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / DMT6012LSS-13

DMT6012LSS-13 - SMD N channel transistors

DMT6012LSS-13
Description

Транзистор: N-MOSFET; польовий; 60В; 8,4А; Idm: 65А; 1,84Вт; SO8

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 8.4A
Pulsed drain current 65A
Power dissipation 1.84W
Case SO8
Gate-source voltage ±20V
On-state resistance 14mΩ
Mounting SMD
Gate charge 22.2nC
Kind of package 13 inch reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat