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Транзистор: N-MOSFET; польовий; 60В; 10,5А; Idm: 120А; 3,1Вт
| Manufacturer |
DIODES INCORPORATED |
| Type of transistor |
N-MOSFET |
| Polarisation |
unipolar |
| Drain-source voltage |
60V |
| Drain current |
10.5A |
| Pulsed drain current |
120A |
| Power dissipation |
3.1W |
| Case |
PowerDI5060-8 |
| Gate-source voltage |
±20V |
| On-state resistance |
17mΩ |
| Mounting |
SMD |
| Gate charge |
22.2nC |
| Kind of package |
13 inch reel tape |
| Kind of channel |
enhancement |