DMT6012LPSW-13 - SMD N channel transistors

DMT6012LPSW-13
Description

Транзистор: N-MOSFET; польовий; 60В; 10,5А; Idm: 120А; 3,1Вт

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 10.5A
Pulsed drain current 120A
Power dissipation 3.1W
Case PowerDI5060-8
Gate-source voltage ±20V
On-state resistance 17mΩ
Mounting SMD
Gate charge 22.2nC
Kind of package 13 inch reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat