DMT6010SCT - THT N channel transistors

DMT6010SCT
Description

Транзистор: N-MOSFET; польовий; 60В; 98А; Idm: 160А; 104Вт; TO220-3

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 98A
Pulsed drain current 160A
Power dissipation 104W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 7.2mΩ
Mounting THT
Gate charge 36.3nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat