DMT6009LK3-13 - SMD N channel transistors

DMT6009LK3-13
Description

Транзистор: N-MOSFET; польовий; 60В; 10,6А; Idm: 90А; 2,6Вт; TO252

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 10.6A
Pulsed drain current 90A
Power dissipation 2.6W
Case TO252
Gate-source voltage ±16V
On-state resistance 12.8mΩ
Mounting SMD
Gate charge 33.5nC
Kind of package 13 inch reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat