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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / DMT6009LCT

DMT6009LCT - THT N channel transistors

DMT6009LCT
Description

Транзистор: N-MOSFET; польовий; 60В; 29,8А; Idm: 80А; 2,2Вт; TO220-3

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 29.8A
Pulsed drain current 80A
Power dissipation 2.2W
Case TO220-3
Gate-source voltage ±16V
On-state resistance 14.5mΩ
Mounting THT
Gate charge 33.5nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat