DMT6007LFGQ-7 - SMD N channel transistors

DMT6007LFGQ-7
Description

Транзистор: N-MOSFET; польовий; 60В; 12А; Idm: 80А; 2,2Вт

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 12A
Pulsed drain current 80A
Power dissipation 2.2W
Case PowerDI3333-8
Gate-source voltage ±20V
On-state resistance 8.5mΩ
Mounting SMD
Gate charge 41.3nC
Kind of package 7 inch reel
tape
Kind of channel enhancement
Application automotive industry
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Development and design: Seventh Cat