DMT6004SCT - THT N channel transistors

DMT6004SCT
Description

Транзистор: N-MOSFET; польовий; 60В; 100А; Idm: 180А; 113Вт; TO220AB

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 100A
Pulsed drain current 180A
Power dissipation 113W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 3.1mΩ
Mounting THT
Gate charge 95.4nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat