DMT10H015SK3-13 - SMD N channel transistors

DMT10H015SK3-13
Description

Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 215A; 2.9W; TO252

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 43A
Pulsed drain current 215A
Power dissipation 2.9W
Case TO252
Gate-source voltage ±20V
On-state resistance 11.1mΩ
Mounting SMD
Gate charge 30.1nC
Kind of package 13 inch reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat