DMNH6008SCT - THT N channel transistors

DMNH6008SCT
Description

Transistor: N-MOSFET; unipolar; 60V; 90A; Idm: 200A; 100W; TO220AB

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 90A
Pulsed drain current 200A
Power dissipation 100W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 6mΩ
Mounting THT
Gate charge 21nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat