DMNH10H028SCT - THT N channel transistors

DMNH10H028SCT
Description

Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 90A; 2.8W; TO220AB

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 42A
Pulsed drain current 90A
Power dissipation 2.8W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 19mΩ
Mounting THT
Gate charge 25.4nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat