DMN3190LDW-7 - Multi channel transistors

DMN3190LDW-7
Description

Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 30V
Drain current 0.9A
Pulsed drain current 9.6A
Power dissipation 0.32W
Case SOT363
Gate-source voltage ±20V
On-state resistance 0.19Ω
Mounting SMD
Kind of package 7 inch reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat