DMN3018SSS-13 - SMD N channel transistors

DMN3018SSS-13
Description

Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 60A; 1.1W; SO8

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 5.8A
Pulsed drain current 60A
Power dissipation 1.1W
Case SO8
Gate-source voltage ±25V
On-state resistance 35mΩ
Mounting SMD
Gate charge 13.2nC
Kind of package 13 inch reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat