DMN3016LSS-13 - SMD N channel transistors

DMN3016LSS-13
Description

Transistor: N-MOSFET; unipolar; 30V; 9.5A; Idm: 80A; 2W; SO8

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 9.5A
Pulsed drain current 80A
Power dissipation 2W
Case SO8
Gate-source voltage ±20V
On-state resistance 16mΩ
Mounting SMD
Gate charge 25.1nC
Kind of package 13 inch reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat