DMG1013T-7 - SMD P channel transistors

DMG1013T-7
Description

Transistor: P-MOSFET; unipolar; -20V; -0.33A; Idm: -6A; 0.27W; ESD

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -330mA
Pulsed drain current -6A
Power dissipation 0.27W
Case SOT523
Gate-source voltage ±6V
On-state resistance 0.7Ω
Mounting SMD
Kind of package 7 inch reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat