DIW170SIC750-DIO - THT N channel transistors

DIW170SIC750-DIO
Description

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 62W

Specifications
Manufacturer DIOTEC SEMICONDUCTOR
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.7kV
Drain current 3.5A
Pulsed drain current 6A
Power dissipation 62W
Case TO247-3
Gate-source voltage ±20V
On-state resistance 0.75Ω
Mounting THT
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat