Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / DIW170SIC049-DIO

DIW170SIC049-DIO - THT N channel transistors

DIW170SIC049-DIO
Description

Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 47A; Idm: 150A; 357W

Specifications
Manufacturer DIOTEC SEMICONDUCTOR
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.7kV
Drain current 47A
Pulsed drain current 150A
Power dissipation 357W
Case TO247-3
Gate-source voltage -4...18V
On-state resistance 81mΩ
Mounting THT
Gate charge 179nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat