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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / DIW120SIC059-AQ

DIW120SIC059-AQ - THT N channel transistors

DIW120SIC059-AQ
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 100A; 278W

Specifications
Manufacturer DIOTEC SEMICONDUCTOR
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 46A
Pulsed drain current 100A
Power dissipation 278W
Case TO247-3
Gate-source voltage -4...18V
On-state resistance 65mΩ
Mounting THT
Gate charge 121nC
Kind of package tube
Kind of channel enhancement
Application automotive industry
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Development and design: Seventh Cat