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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / DIW120SIC028-DIO

DIW120SIC028-DIO - THT N channel transistors

DIW120SIC028-DIO
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 295A; 715W

Specifications
Manufacturer DIOTEC SEMICONDUCTOR
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 84A
Pulsed drain current 295A
Power dissipation 715W
Case TO247-3
Gate-source voltage -5...20V
On-state resistance 26mΩ
Mounting THT
Gate charge 373nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat