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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 100A; Idm: 260A; 600W
| Manufacturer |
DIOTEC SEMICONDUCTOR |
| Type of transistor |
N-MOSFET |
| Technology |
SiC |
| Polarisation |
unipolar |
| Drain-source voltage |
1.2kV |
| Drain current |
100A |
| Pulsed drain current |
260A |
| Power dissipation |
600W |
| Case |
TO247-3 |
| Gate-source voltage |
-4...18V |
| On-state resistance |
29mΩ |
| Mounting |
THT |
| Gate charge |
45nC |
| Kind of package |
tube |
| Kind of channel |
enhancement |
| Application |
automotive industry |