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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / DIW065SIC049-DIO

DIW065SIC049-DIO - THT N channel transistors

DIW065SIC049-DIO
Description

Transistor: N-MOSFET; SiC; unipolar; 650V; 48A; Idm: 135A; 550W

Specifications
Manufacturer DIOTEC SEMICONDUCTOR
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 650V
Drain current 48A
Pulsed drain current 135A
Power dissipation 550W
Case TO247-3
Gate-source voltage -5...18V
On-state resistance 50mΩ
Mounting THT
Gate charge 128nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat