DIW065SIC015-DIO - THT N channel transistors

DIW065SIC015-DIO
Description

Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 300A; 550W

Specifications
Manufacturer DIOTEC SEMICONDUCTOR
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 650V
Drain current 100A
Pulsed drain current 300A
Power dissipation 550W
Case TO247-3
Gate-source voltage -4...15V
On-state resistance 16mΩ
Mounting THT
Gate charge 236nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat