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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / DIW040M120-DIO

DIW040M120-DIO - THT IGBT transistors

DIW040M120-DIO
Description

Transistor: IGBT; 1.2kV; 40A; 330W; TO247-3

Specifications
Manufacturer DIOTEC SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 1.2kV
Collector current 40A
Power dissipation 330W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 160A
Mounting THT
Gate charge 330nC
Kind of package tube
Turn-on time 69ns
Turn-off time 337ns
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat