DIW030F135-DIO - THT IGBT transistors

DIW030F135-DIO
Description

Transistor: IGBT; 1.35kV; 30A; 350W; TO247-3

Specifications
Manufacturer DIOTEC SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 1.35kV
Collector current 30A
Power dissipation 350W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 120A
Mounting THT
Gate charge 4.5µC
Kind of package tube
Turn-on time 45ns
Turn-off time 385ns
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat