DIF120SIC022-AQ - THT N channel transistors

DIF120SIC022-AQ
Description

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 340W

Specifications
Manufacturer DIOTEC SEMICONDUCTOR
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 85A
Pulsed drain current 250A
Power dissipation 340W
Case TO247-4
Gate-source voltage -4...18V
On-state resistance 28mΩ
Mounting THT
Gate charge 269nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
Application automotive industry
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Development and design: Seventh Cat