DG50Q12T2 - THT IGBT transistors

DG50Q12T2
Description

Transistor: IGBT; 1200V; 50A; 672W; TO247PLUS

Specifications
Manufacturer STARPOWER SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 1.2kV
Collector current 50A
Power dissipation 672W
Case TO247PLUS
Gate-emitter voltage ±20V
Pulsed collector current 150A
Mounting THT
Gate charge 0.37µC
Kind of package tube
Turn-on time 172ns
Turn-off time 338ns
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat