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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / DG10X12T2

DG10X12T2 - THT IGBT transistors

DG10X12T2
Description

Transistor: IGBT; 1200V; 10A; 96W; TO247

Specifications
Manufacturer STARPOWER SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 1.2kV
Collector current 10A
Power dissipation 96W
Case TO247
Gate-emitter voltage ±20V
Pulsed collector current 30A
Mounting THT
Gate charge 80nC
Kind of package tube
Turn-on time 37ns
Turn-off time 493ns
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat