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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / CSD19538Q3AT

CSD19538Q3AT - SMD N channel transistors

CSD19538Q3AT
Description

Transistor: N-MOSFET; unipolar; 100V; 15A; 23W; VSONP8; 3.3x3.3mm

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor N-MOSFET
Technology NexFET™
Polarisation unipolar
Drain-source voltage 100V
Drain current 15A
Power dissipation 23W
Case VSONP8
Gate-source voltage ±20V
On-state resistance 49mΩ
Mounting SMD
Gate charge 4.3nC
Kind of package reel
tape
Kind of channel enhancement
Dimensions 3.3x3.3mm
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Development and design: Seventh Cat