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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / CSD19538Q2T

CSD19538Q2T - SMD N channel transistors

CSD19538Q2T
Description

Transistor: N-MOSFET; unipolar; 100V; 14.4A; 20.2W; WSON6; 2x2mm

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor N-MOSFET
Technology NexFET™
Polarisation unipolar
Drain-source voltage 100V
Drain current 14.4A
Power dissipation 20.2W
Case WSON6
Gate-source voltage ±20V
On-state resistance 49mΩ
Mounting SMD
Gate charge 4.3nC
Kind of package reel
tape
Kind of channel enhancement
Dimensions 2x2mm
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Development and design: Seventh Cat