CSD19537Q3T - SMD N channel transistors

CSD19537Q3T
Description

Transistor: N-MOSFET; unipolar; 100V; 50A; 83W; VSON-CLIP8

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor N-MOSFET
Technology NexFET™
Polarisation unipolar
Drain-source voltage 100V
Drain current 50A
Power dissipation 83W
Case VSON-CLIP8
Gate-source voltage ±20V
On-state resistance 12.1mΩ
Mounting SMD
Gate charge 16nC
Kind of package reel
tape
Kind of channel enhancement
Dimensions 3.3x3.3mm
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Development and design: Seventh Cat