CSD19533KCS - THT N channel transistors

CSD19533KCS
Description

Transistor: N-MOSFET; unipolar; 100V; 100A; 188W; TO220-3

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor N-MOSFET
Technology NexFET™
Polarisation unipolar
Drain-source voltage 100V
Drain current 100A
Power dissipation 188W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 8.7mΩ
Mounting THT
Gate charge 27nC
Kind of package tube
Kind of channel enhancement
Heatsink thickness 1.14...1.4mm
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Development and design: Seventh Cat