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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / CSD19531KCS

CSD19531KCS - THT N channel transistors

CSD19531KCS
Description

Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TO220-3

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor N-MOSFET
Technology NexFET™
Polarisation unipolar
Drain-source voltage 100V
Drain current 100A
Power dissipation 214W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 6.4mΩ
Mounting THT
Gate charge 37nC
Kind of package tube
Kind of channel enhancement
Heatsink thickness 1.14...1.4mm
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Development and design: Seventh Cat