CSD19501KCS - THT N channel transistors

CSD19501KCS
Description

Transistor: N-MOSFET; unipolar; 80V; 100A; 217W; TO220-3

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor N-MOSFET
Technology NexFET™
Polarisation unipolar
Drain-source voltage 80V
Drain current 100A
Power dissipation 217W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 5.5mΩ
Mounting THT
Gate charge 38nC
Kind of package tube
Kind of channel enhancement
Heatsink thickness 1.14...1.4mm
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Development and design: Seventh Cat