CSD18536KTTT - SMD N channel transistors

CSD18536KTTT
Description

Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 375W; D2PAK

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor N-MOSFET
Technology NexFET™
Polarisation unipolar
Drain-source voltage 60V
Drain current 200A
Pulsed drain current 400A
Power dissipation 375W
Case D2PAK
Gate-source voltage ±20V
On-state resistance 2.2mΩ
Mounting SMD
Gate charge 108nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat