CSD18535KTT - SMD N channel transistors

CSD18535KTT
Description

Транзистор: N-MOSFET; польовий; 60В; 200А; Idm: 400А; 300Вт; D2PAK

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor N-MOSFET
Technology NexFET™
Polarisation unipolar
Drain-source voltage 60V
Drain current 200A
Pulsed drain current 400A
Power dissipation 300W
Case D2PAK
Gate-source voltage ±20V
On-state resistance 2.9mΩ
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat