CSD18510KTTT - SMD N channel transistors

CSD18510KTTT
Description

Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; D2PAK

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor N-MOSFET
Technology NexFET™
Polarisation unipolar
Drain-source voltage 40V
Drain current 200A
Pulsed drain current 400A
Power dissipation 250W
Case D2PAK
Gate-source voltage ±20V
On-state resistance 2.6mΩ
Mounting SMD
Gate charge 119nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat