CSD17579Q5AT - SMD N channel transistors

CSD17579Q5AT
Description

Transistor: N-MOSFET; unipolar; 30V; 25A; 36W; VSONP8; 5x6mm

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor N-MOSFET
Technology NexFET™
Polarisation unipolar
Drain-source voltage 30V
Drain current 25A
Power dissipation 36W
Case VSONP8
Gate-source voltage ±20V
On-state resistance 11.6mΩ
Mounting SMD
Gate charge 5.4nC
Kind of package reel
tape
Kind of channel enhancement
Dimensions 5x6mm
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat