CSD17577Q3AT - SMD N channel transistors

CSD17577Q3AT
Description

Transistor: N-MOSFET; unipolar; 30V; 35A; 53W; VSONP8; 3.3x3.3mm

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor N-MOSFET
Technology NexFET™
Polarisation unipolar
Drain-source voltage 30V
Drain current 35A
Power dissipation 53W
Case VSONP8
Gate-source voltage ±20V
On-state resistance 5.3mΩ
Mounting SMD
Gate charge 12nC
Kind of package reel
tape
Kind of channel enhancement
Dimensions 3.3x3.3mm
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Development and design: Seventh Cat