CSD17576Q5BT - SMD N channel transistors

CSD17576Q5BT
Description

Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; VSON-CLIP8; 5x6mm

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor N-MOSFET
Technology NexFET™
Polarisation unipolar
Drain-source voltage 30V
Drain current 100A
Power dissipation 125W
Case VSON-CLIP8
Gate-source voltage ±20V
On-state resistance 2.4mΩ
Mounting SMD
Gate charge 25nC
Kind of package reel
tape
Kind of channel enhancement
Dimensions 5x6mm
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat