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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / CSD17308Q3T

CSD17308Q3T - SMD N channel transistors

CSD17308Q3T
Description

Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 167A; 2.7W; 3.3x3.3mm

Specifications
Manufacturer TEXAS INSTRUMENTS
Type of transistor N-MOSFET
Technology NexFET™
Polarisation unipolar
Drain-source voltage 30V
Drain current 50A
Pulsed drain current 167A
Power dissipation 2.7W
Case VSON-CLIP8
Gate-source voltage ±10V
On-state resistance 9.4mΩ
Mounting SMD
Gate charge 3.9nC
Kind of package reel
tape
Kind of channel enhancement
Dimensions 3.3x3.3mm
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Development and design: Seventh Cat