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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / BXT600P03M

BXT600P03M - SMD P channel transistors

BXT600P03M
Description

Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W

Specifications
Manufacturer BRIDGELUX
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -30V
Drain current -2.7A
Pulsed drain current -16.4A
Power dissipation 1.51W
Case SOT23-3
Gate-source voltage ±20V
On-state resistance 85mΩ
Mounting SMD
Gate charge 6.8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat