BXT3800P06M - SMD P channel transistors

BXT3800P06M
Description

Transistor: P-MOSFET; unipolar; -60V; -2.1A; Idm: -12A; 1.2W

Specifications
Manufacturer BRIDGELUX
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -2.1A
Pulsed drain current -12A
Power dissipation 1.2W
Case SOT23-3
Gate-source voltage ±20V
On-state resistance 0.55Ω
Mounting SMD
Gate charge 11nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat