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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / BXT2800N10M

BXT2800N10M - SMD N channel transistors

BXT2800N10M
Description

Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3

Specifications
Manufacturer BRIDGELUX
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 1.4A
Pulsed drain current 8.8A
Power dissipation 2.8W
Case SOT23-3
Gate-source voltage ±20V
On-state resistance 0.31Ω
Mounting SMD
Gate charge 12nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat