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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / BXT1150N10J

BXT1150N10J - SMD N channel transistors

BXT1150N10J
Description

Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3

Specifications
Manufacturer BRIDGELUX
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 5.6A
Pulsed drain current 32A
Power dissipation 2W
Case SOT89-3
Gate-source voltage ±20V
On-state resistance 135mΩ
Mounting SMD
Gate charge 21nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat