BXT1150N10D - SMD N channel transistors

BXT1150N10D
Description

Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252

Specifications
Manufacturer BRIDGELUX
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 12.8A
Pulsed drain current 64A
Power dissipation 78W
Case TO252
Gate-source voltage ±20V
On-state resistance 135mΩ
Mounting SMD
Gate charge 21nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat