BXT1000N06M - SMD N channel transistors

BXT1000N06M
Description

Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3

Specifications
Manufacturer BRIDGELUX
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 2A
Pulsed drain current 12A
Power dissipation 1.5W
Case SOT23-3
Gate-source voltage ±20V
On-state resistance 0.11Ω
Mounting SMD
Gate charge 5.2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat