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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / BXS1150N10M

BXS1150N10M - SMD N channel transistors

BXS1150N10M
Description

Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W

Specifications
Manufacturer BRIDGELUX
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 2.6A
Pulsed drain current 15.6A
Power dissipation 2.5W
Case SOT23-3
Gate-source voltage ±20V
On-state resistance 0.15Ω
Mounting SMD
Gate charge 16.3nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat