BXS049N08P - THT N channel transistors

BXS049N08P
Description

Transistor: N-MOSFET; unipolar; 85V; 79A; Idm: 560A; 189W; TO220

Specifications
Manufacturer BRIDGELUX
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 85V
Drain current 79A
Pulsed drain current 560A
Power dissipation 189W
Case TO220
Gate-source voltage ±20V
On-state resistance 4.9mΩ
Mounting THT
Gate charge 72nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat