BXP4N65F - THT N channel transistors

BXP4N65F
Description

Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F

Specifications
Manufacturer BRIDGELUX
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 650V
Drain current 2.5A
Pulsed drain current 16A
Power dissipation 37W
Case TO220F
Gate-source voltage ±30V
On-state resistance 2.8Ω
Mounting THT
Gate charge 13nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat